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1 aug-19-2004 n- & p-channel enhancement mode field effect transistor P2804NVG sop-8 lead-free niko-sem absolute maximum ratings (t c = 25 c unless otherwise noted) parameters/test conditions symbol n-channel p-channel units drain-source voltage v ds 40 -40 v gate-source voltage v gs 20 20 v t c = 25 c 7 -6 continuous drain current t c = 70 c i d 6 -5 pulsed drain current 1 i dm 20 -20 a t c = 25 c 2 power dissipation t c = 70 c p d 1.3 w junction & storage temperature range t j , t stg -55 to 150 lead temperature ( 1 / 16 ? from case for 10 sec.) t l 275 c thermal resistance ratings thermal resistance symbol typical maximum units junction-to-ambient r ja 62.5 c / w 1 pulse width limited by maximum junction temperature. 2 duty cycle 1% electrical characteristics (t c = 25 c, unless otherwise noted) limits unit parameter symbol test conditions min typ max static v gs = 0v, i d = 250 a drain-source breakdown voltage v (br)dss v gs = 0v, i d = -250 a n-ch p-ch 40 -40 v ds = v gs , i d = 250 a gate threshold voltage v gs(th) v ds = v gs , i d = -250 a n-ch p-ch 1.0 -1.0 1.5 -1.5 2.5 -2.5 v g : gate d : drain s : source product summary v (br)dss r ds(on) i d n-channel 40 28m ? 7a p-channel -40 65m ? -5a free datasheet http:///
2 aug-19-2004 n- & p-channel enhancement mode field effect transistor P2804NVG sop-8 lead-free niko-sem v ds = 0v, v gs = 20v gate-body leakage i gss v ds = 0v, v gs = 20v n-ch p-ch 100 100 na v ds = 32v, v gs = 0v v ds = -32v, v gs = 0v n-ch p-ch 1 -1 v ds = 30v, v gs = 0v, t j = 55 c zero gate voltage drain current i dss v ds = -30v, v gs = 0v, t j = 55 c n-ch p-ch 10 -10 a v ds = 5v, v gs = 10v on-state drain current 1 i d(on) v ds =-5v, v gs = -10v n-ch p-ch 20 -20 a v gs = 4.5v, i d = 6a v gs = -4.5v, i d = -4a n-ch p-ch 30 80 42 105 v gs = 10v, i d = 7a drain-source on-state resistance 1 r ds(on) v gs = -10v, i d = -5a n-ch p-ch 21 50 28 65 m ? v ds = 10v, i d = 7a forward transconductance 1 g fs v ds = -10v, i d = -5a n-ch p-ch 19 11 s dynamic input capacitance c iss n-ch p-ch 790 690 output capacitance c oss n-ch p-ch 175 310 reverse transfer capacitance c rss n-channel v gs = 0v, v ds = 10v, f = 1mhz p-channel v gs = 0v, v ds = -10v, f = 1mhz n-ch p-ch 65 75 pf total gate charge 2 q g n-ch p-ch 16 14 gate-source charge 2 q gs n-ch p-ch 2.5 2.2 gate-drain charge 2 q gd n-channel v ds = 0.5v (br)dss , v gs = 10v, i d = 7a p-channel v ds = 0.5v (br)dss , v gs = -10v, i d = -5a n-ch p-ch 2.1 1.9 nc free datasheet http:/// 3 aug-19-2004 n- & p-channel enhancement mode field effect transistor P2804NVG sop-8 lead-free niko-sem turn-on delay time 2 t d(on) n-ch p-ch 2.2 6.7 4.4 13.4 rise time 2 t r n-ch p-ch 7.5 9.7 15 19.4 turn-off delay time 2 t d(off) n-ch p-ch 11.8 19.8 21.3 35.6 fall time 2 t f n-channel v ds = 20v i d ? 1a, v gs = 10v, r gen = 6 ? p-channel v ds = -20v, r l = 1 ? i d ? -1a, v gs = -10v, r gen = 6 ? n-ch p-ch 3.7 12.3 7.4 22.2 ns source-drain diode ratin gs and characteristics (t c = 25 c) continuous current i s n-ch p-ch 1.3 -1.3 pulsed current 3 i sm n-ch p-ch 2.6 -2.6 a i f = i s , v gs = 0v forward voltage 1 v sd i f = i s , v gs = 0v n-ch p-ch 1 -1 v 1 pulse test : pulse width 300 sec, duty cycle 2%. 2 independent of operating temperature. 3 pulse width limited by maximum junction temperature. remark: the product marked with ?P2804NVG?, date code or lot # orders for parts with lead-free plating can be placed using the pxxxxxxg parts name. free datasheet http:/// 4 aug-19-2004 n- & p-channel enhancement mode field effect transistor P2804NVG sop-8 lead-free niko-sem typical performance characteristics n-channel body diode forward voltage variation with source current and temperature 25 c t = 125 c v - body diode forward voltage(v) is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 a gs 1.0 0.8 1.2 -55 c 1.4 free datasheet http:/// 5 aug-19-2004 n- & p-channel enhancement mode field effect transistor P2804NVG sop-8 lead-free niko-sem free datasheet http:/// 6 aug-19-2004 n- & p-channel enhancement mode field effect transistor P2804NVG sop-8 lead-free niko-sem p-channel 25 c -v - body diode forward voltage(v) -is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 gs a t = 125 c 1.0 0.8 1.2 -55 c 1.4 free datasheet http:/// 7 aug-19-2004 n- & p-channel enhancement mode field effect transistor P2804NVG sop-8 lead-free niko-sem free datasheet http:/// 8 aug-19-2004 n- & p-channel enhancement mode field effect transistor P2804NVG sop-8 lead-free niko-sem soic-8(d) mechanical data mm mm dimension min. typ. max. dimension min. typ. max. a 4.8 4.9 5.0 h 0.5 0.715 0.83 b 3.8 3.9 4.0 i 0.18 0.254 0.25 c 5.8 6.0 6.2 j 0.22 d 0.38 0.445 0.51 k 0 4 8 e 1.27 l f 1.35 1.55 1.75 m g 0.1 0.175 0.25 n h c b a d e f g i j k free datasheet http:/// |
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